System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques

ABSTRACT

A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined predetermined repetition rate. Using such emitted beam pulses, at least one section of one of the semiconductor film samples is irradiated using a first sequential lateral solidification (“SLS”) technique and/or a first uniform small grained material (“UGS”) techniques to process the such sections) of the first sample. Upon the completion of the processing of this section of the first sample, the beam pulses are redirected to impinge at least one section of a second sample of the semiconductor film samples. Then, using the redirected beam pulses, such sections) of the second sample are irradiated using a second SLS technique and/or a second UGS technique to process the at least one section of the second sample. The first and second techniques can be different from one another or substantially the same.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a national phase of International ApplicationPCT/US04/004929, filed Feb. 18, 2004, published Sept. 2, 2004, whichclaims priority from U.S. Provisional Application Ser. No. 60/448,713,filed Feb. 19, 2003, each of which are incorporated by reference intheir entireties herein, and from which priority is claimed.

FIELD OF THE INVENTION

The present invention relates to a system and process for processing aplurality of semiconductor thin films (such as silicon thin films) usinga pulse energy beam. In particular, one exemplary embodiment of thesystem and process utilizes a pulsed beam in conjunction with asequential lateral solidification (“SLS”) technique to irradiate atleast two semiconductor thin films, without stopping the emission ofenergy the pulsed beam. Another exemplary embodiment of the system andprocess also uses a pulsed beam to irradiate sections of the film suchthat the areas that have been irradiated and resolidified which havesmall-grains therein do not overlap one another, and can be used toplace therein thin film transistor (“TFT”) devices.

BACKGROUND INFORMATION

Semiconductor films, such as silicon films, are known to be used forproviding pixels for liquid crystal display devices. Such films havepreviously been processed (i.e., irradiated by an excimer laser and thencrystallized) via excimer laser annealing (“ELA”) techniques. However,the semiconductor films processed using such known ELA methods oftensuffer from microstructural non-uniformities such as edge effects, whichmanifest themselves in availing a non-uniform performance of thin-filmtransistor (“TFT”) devices fabricated on such films. In addition, it maytake approximately 200 second to 600 seconds to completely process thesemiconductor film sample using the ELA techniques, without even takinginto consideration the time it takes to load and unload such sample.

Other more advantageous processes and systems for processing thesemiconductor thin films for use in the liquid crystal displays andorganic light emitting diode displays for fabricating large grainedsingle crystal or polycrystalline silicon thin films using sequentiallateral solidification (“SLS”) techniques have been described. Forexample, U.S. Pat. Nos. 6,322,625 and 6,368,945 issued to Dr. James Im,and U.S. patent application Ser. Nos. 09/390,535 and 09/390,537, theentire disclosures of which are incorporated herein by reference, andwhich are assigned to the common assignee of the present application,describe such SLS systems and processes. These patent documents describecertain techniques in which one or more areas on the semiconductor thinfilm are, e.g., sequentially irradiated. One of the benefits of theseSLS techniques is that the semiconductor film sample and/or sectionsthereof can be processed (e.g., crystallized) much faster that it wouldtake for the processing the semiconductor film by the conventional ELAtechniques. Typically, the processing/crystallization time of thesemiconductor film sample depends on the type of the substrates, as wellas other factors. For example, it is possible to completelyprocess/crystallize the semiconductor film using the SLS techniques inapproximately 50 to 100 seconds not considering the loading andunloading times of such samples.

In order to uniformly process the semiconductor films, it is importantfor the beam pulse to be stable. Thus, to achieve the optimal stability,it is preferable to pulse or fire the beam constantly, i.e., withoutstopping the pulsing of the beam. Such stability may be reduced orcompromised when the pulsed beams are turned off or shut down, and thenrestarted. However, when the semiconductor sample is loaded and/orunloaded from a stage, the pulsed beam would be turned off, and thenturned back on when the semiconductor sample to be processed waspositioned at the designated location on the stage. The time for loadingand unloading is generally referred to as a “transfer time.” Thetransfer time for unloading the processed sample from the stage, andthen loading another to-be-processed sample on the stage is generallythe same when for the ELA techniques and the SLS techniques. Suchtransfer time can be between 50 and 100 seconds.

In addition, the costs associated with processing semiconductor samplesare generally correlated with the number of pulses emitted by the beamsource. In this manner, a “price per shot/pulse” is established. If thebeam source is not shut down (i.e., still emit the beam pulses) when thenext semiconductor sample is loaded unto the stage, or unloaded from thestage, the number of such irradiations by the beam source when thesample is not being irradiated by the beam pulse and corresponding timetherefore is also taken into consideration for determining the price pershot. For example, when utilizing the SLS techniques, the time of theirradiation, solidification and crystallization of the semiconductorsample is relatively short as compared to the sample processing timeusing the ELA techniques. In such case, approximately half of the beampulses are not directed at the sample since such samples are beingeither loaded into the stage or unloaded from the stage. Therefore, thebeam pulses that are not impinging the samples are wasted.

Another exemplary technique for processing semiconductor thin film hasbeen developed. In particular, such system and process can producegenerally uniform areas on the substrate films such that the TFT devicescan be situated in such areas. For example, portions of the irradiatedfilm are irradiated, then nucleated (based on the threshold behavior ofthe beam pulse), and then solidified, such that upon re-solidification,the nucleated area becomes a region with uniform small grained material(to be referred to herein below as the “UGS techniques”). Thus, such UGStechniques are different from the SLS techniques in that for theSLS-techniques, the nucleated areas are avoided, while for the UGStechniques, the nucleated areas are utilized for placing the TFT devicestherein. Indeed, using the UGS technique, there can be significant timesavings since each irradiated area of the semiconductor thin film isirradiated once, without the need to re-irradiate a substantial portionthereof, while still providing a good uniform material therein. Many ofthese UGS techniques are described in U.S. Patent Application SerialNos. 60/405,084, 60/405,083 and 60/405,085, and InternationalApplications PCT/US03/25946, PCT/US03/25972 and PCT/US03/25954, theentire disclosures of which are incorporated herein by reference.

Accordingly, it is preferable to reduce the price per shot, withoutstopping the emission of the beam pulses. It is also preferable to beable to process two or more semiconductor samples, without the need tostop or delay the emission of the pulsed beam by the beam source untilthe samples are loaded on the respective stages.

SUMMARY OF THE INVENTION

To achieve at least some of these objects, various systems and processaccording to the present invention are described below which can beutilized to, e.g., sequentially process a semiconductor (e.g., silicon)thin film sample (i.e., by irradiating and melting thin film of thesample, and allowing melted portions thereof to solidify andcrystallize) on one stage, while unloading a previously-processed samplefrom another stage, and then loading an unprocessed sample thereon,without the need to shut down a pulsed beam. The exemplary embodimentsof the systems and process for processing the samples in this mannershall be described in further detail below. However, it should beunderstood that the present invention is in no way limited to theexemplary embodiments of the systems and processes described herein.

One such exemplary embodiment of the process and system according to thepresent invention is provided for processing at least one section ofeach of a plurality of semiconductor film samples. With these processand system, the irradiation beam source can be controlled to emitsuccessive irradiation beam pulses at a predetermined repetition rate.Using such emitted beam pulses, at least one section of one of thesemiconductor film samples may be irradiated using at least one firstsequential lateral solidification (“SLS”) technique and/or at least onefirst uniform small grained material (“UGS”) technique so as to processsuch section(s) of the first sample. Upon the completion of theprocessing of the section(s) of the first sample, the beam pulses can beredirected to impinge at least one section of a second sample of thesemiconductor film samples. Then, using the redirected beam pulses, suchsection(s) of the second sample is irradiated using at least one secondSLS technique and/or at least one second UGS technique to process thesection(s) of the second sample. The first and second SLS and/or UGStechniques can be different from one another, or may be substantiallythe same.

According to another exemplary embodiment of the present invention, thesecond sample can be is an unprocessed sample. The first sample can beloaded on a stage of a first chamber, and the second sample may beloaded on a stage of the second chamber. In addition, during theirradiation of the first sample, a third sample of the film samples thatwas previously irradiated and processed using the first SLS/UGStechnique(s) and/or the second SLS/UGS technique(s) can be unloaded fromthe stage of the second chamber. Then, the second sample may be loadedunto the stage of the second chamber.

In yet another exemplary embodiment of the present invention, during theirradiation of the second sample, the first sample can be unloaded fromthe stage of the first chamber. Thereafter and during the irradiation ofthe second sample, a fourth unprocessed sample of the film samples maybe loaded unto the stage of the first chamber. Upon the completion ofthe loading of the fourth sample, the beam pulse may again be redirectedto impinge the section(s) of the fourth sample. After such redirection,such section(s) of the fourth sample can be irradiated using the firstSLS/UGS technique(s) and/or the second SLS/UGS technique(s) so as toprocess the section(s) of the fourth sample.

According to still another exemplary embodiment of the presentinvention, the beam pulses can be redirected using a beam redirectingarrangement which may include a beam reflection device. Further, if isdetermined that the second sample has not been successfully loaded untothe stage of the second chamber, the irradiation of the second samplecan be prevented or delayed until the second sample is successfullyloaded unto the stage of the second chamber. If it is determined thatthe entire section(s) of the first sample was/were not successfullyprocessed, the irradiation of the second sample can be prevented ordelayed until the processing of all of the section(s) of the firstsample has/have been successfully processed.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention and itsadvantages, reference is now made to the following description, taken inconjunction with the accompanying drawings, in which:

FIG. 1 is a schematic block diagram of an exemplary embodiment of asequential-lateral solidification (“SLS”) and/or uniform small grainedmaterial (“UGS”) processing system according to the present inventionwhich processes semiconductor samples, sequentially, in two or morechambers using a beam directing arrangement;

FIG. 2 is a detailed illustration of an exemplary embodiment of one ormore chambers shown in FIG. 1;

FIG. 3 is a detailed illustration of an exemplary embodiment of the beamdirecting arrangement of FIG. 1;

FIG. 4 is a top-level flow diagram of an exemplary embodiment of aprocess according to the present invention for sequentiallySLS-processing or UGS-processing two or more samples, each beingprovided in its respective chamber; and

FIG. 5 is a detailed flow diagram of an exemplary embodiment of theprocess according to the present invention in which one sample on onestage is being processed, while previously SLS-processed orUGS-processed sample is removed from another stage and an unprocessedsample is loaded thereon.

DETAILED DESCRIPTION

Certain systems and processes for providing continuous motion SLS aredescribed in U.S. Pat. Nos. 6,322,625 and 6,368,945 and U.S. patentapplication Ser. Nos. 09/390,535 and 09/390,537. In addition, systemsand processes for providing uniform small grained materials (“UGS”)techniques are described in U.S. Patent Application Serial Nos.60/405,084, 60/405,083 and 60/405,085, and International ApplicationsPCT/US03/25946, PCT/US03/25972 and PCT/US03/25954. Exemplary systems andprocessed according to the present invention can employ principles andcomponents thereof to sequentially process a thin film of each of two ormore semiconductor samples In particular, the system and processaccording to the present invention can be used to process two or moresamples (provided on distinct stages). Each of the sample has anamorphous silicon thin film provided thereon.

In particular, as shown in FIG. 1, an exemplary embodiment of the systemaccording to the present invention may include a beam source 110 (e.g.,a Lambda Physik model LPX-315I XeC1 pulsed excimer laser) emitting apulsed irradiation beam (e.g., a laser beam), a controllable beam energydensity modulator 120 for modifying the energy density of theirradiation beam, and a MicroLas two plate variable attenuator 130(e.g., from MicroLas). It should be understood by those skilled in theart that instead of the beam source 110 (e.g., the pulsed excimerlaser), it is possible to use a pulsed solid state laser, a choppedcontinuous wave laser, a pulsed electron beam and a pulsed ion beam,etc. Typically, the radiation beam pulses 111 generated by the beamsource 110 provide a beam intensity in the range of 10 mJ/cm² to 1J/cm², a pulse duration (FWHM) in the range of 10 to 300 nsec, and apulse repetition rate in the range of 10 Hz to 300 Hz. The modulatedbeam pulses 135 exiting a beam attenuator and shutter 130 can beprovided to a beam directing arrangement 200, which further directs thepulsed beam either to a first chamber 210 or to a second chamber 220.Exemplary details of such chambers 210, 220 shall be described below infurther detail, with reference to FIG. 2.

Each of the first and second chambers 210, 220 is configured to be ableto load therein the semiconductor sample prior to the thin film (orportion thereof) of such sample being irradiated and melted by thepulsed beam, solidified and then crystallized using one or moresequential lateral solidification (“SLS ”) and/or uniform small grainedmaterials (“UGS”) techniques. In addition, upon the completion of suchprocessing of the semiconductor sample, each of these chambers 210, 220can be configured to remove the SLS/UGS-processed sample therefrom, andload another unprocessed sample after the previously SLS-processedsample is removed.

The exemplary embodiment of the system illustrated in FIG. 1 alsoincludes a processing arrangement 100 (e.g., a computer which includes amicroprocessor executing instructions thereon, such as those implementedby software stored on its storage device or which is provided remotelytherefrom). This processing arrangement 100 is communicably coupled tothe beam source 110, the energy density modulator 120, and the beamattenuator and shutter 130. In this manner, the processing arrangement100 can control the rate of the pulse of the beam being emitted by thebeam source 110. The processing arrangement 100 can also control therepetition of the pulsed beam, as well as its modulation and attenuation(e.g., using arrangements 120, 130).

The processing arrangement 100 is further communicably coupled to thebeam directing arrangement 200, the first chamber 210 and the secondchamber 220. Such coupling by the processing arrangement 100 to firstchamber 210 and the second chamber 220 provides information to theprocessing arrangement regarding whether the entire sample in therespective chamber has been completely crystallized using the particularSLS and/or UGS technique, if the previously processed sample has beenunloaded from the chamber, and if the unprocessed sample has been loadedinto such chamber. In addition, the processing arrangement 100 cancontrol the loading and unloading of the sample into the chambers 210,220.

With such information, the processing arrangement 100 can control thebeam directing arrangement 200 to selectively direct the pulsed beam 135toward the first chamber 210 or the second chamber, depending on theinformation obtained by the processing arrangements 100 from thesechambers 210, 220. The details of the control by the processingarrangement 100 of the beam directing arrangement 200 based on suchinformation shall be described in further detail below.

In exemplary operation of the system and process according to thepresent invention, the SLS and/or UGS processing of the sample in thefirst chamber 210 can be performed under the control of the processingarrangement 100 such that the pulsed beam 135 is provided by the beamdirecting arrangement 200 to the first chamber 210 so as to irradiateand crystallize the semiconductor sample therein. During suchSLS-processing of the sample in the first chamber 210, the previouslySLS-processed sample situated in the second chamber 220 is unloaded alsounder the control and direction of the processing arrangement 100, and adifferent, previously-unprocessed sample is loaded into this secondchamber 220.

Upon the completion of the SLS and/or UGS processing of the sample inthe first chamber 210, the processing arrangement 100 determines if thenew unprocessed sample has been properly loaded into the second chamber220 (e.g., unto a stage thereof). If that is the case, the processingarrangement 100 controls the beam directing arrangement 200 to directthe pulsed beam 135 toward the second chamber 220 so as to SLS-processand/or UGS-process the new sample that has been loaded into the secondchamber 220. When the SLS-processing of this sample in the secondchamber 220 is commenced, the processing arrangement 100 controls thefirst chamber 210 (e.g., a stage thereof) to unload theSLS/UGS-processed sample therefrom, and then load anotheryet-unprocessed semiconductor sample into the first chamber 210. In thismanner, while one sample is being processed in one chamber, anotherunprocessed sample is loaded to a further chamber to beSLS/UGS-processed immediately or shortly thereafter.

As described above, this exemplary procedure is effectuated, withoutshutting down the beam source 110, by re-directing the beam from thepreviously irradiated chamber to another chamber which has loadedtherein the unprocessed sample so as to subsequently SLS/UGS-processsuch sample. This exemplary procedure continues until it is determined(either by the processing arrangement 100 and/or manually by an operatorof the system) that the intended samples have been SLS/UGS-processed. Atthat time, the beam source 110 is shut down, and the loading/unloadingof the samples in the first and second chambers 210, 220 can be stopped.

In this manner, the pulsed beam 135 is operated until all intendedsamples have been SLS-processed, without being shut down between theprocessing of the subsequent samples. Therefore, due to the fact thepulsed beam is not shut down by the beam source 110, such beam can bepulsed or shot continuously, and its stability would not be compromised.In addition, the loading and unloading time within of one chamber can beused to process a further semiconductor sample in another chamber so asto continuously process the samples in the chambers, and thus theprice-per-shot achieved with these system and process of the presentinvention may be significantly smaller that the price-per-shoteffectuated by the conventional systems.

FIG. 2 shows a detailed illustration of an exemplary embodiment of atleast one of the chambers 210, 220 that are provided in FIG. 1. Inparticular, the exemplary chamber of FIG. 2 includes beam steeringmirrors 140, 143, 147, 160 and 162, beam expanding and collimatinglenses 141 and 142, a beam homogenizer 144, a condenser lens 145, afield lens 148, a projection mask 150 which may be mounted in atranslating stage (not shown), a 4×-6× eye piece 161, a controllableshutter 152, a multi-element 4×-6× objective lens 163 for focusing aradiation beam pulse 164 onto the sample 170 having the semiconductorthin film to be processed mounted on a sample translation stage 180, anda granite block optical bench 190 supported on a vibration isolation andself-leveling system 191, 192, 193 and 194. The pulsed beam 135 isforwarded toward the chamber and to the beam steering mirror 140 by thebeam directing arrangement 200

The computing arrangement 100 is communicably coupled to and the sampletranslation stage 180. As described in U.S. Pat. Nos. 6,322,625 and6,368,945, the sample translation stage 180 is preferably controlled bythe processing arrangement 100 to effectuate translations of the sample170 in the planar X-Y directions, as well as in the Z direction. In thismanner, the processing arrangement 100 can control the relative positionof the sample 170 with respect to the irradiation beam pulse 164directed at the respective sample 170. In addition, the processingarrangement 100 can control the loading of the sample 170 to thetranslation stage 180, and unloading thereof from the translation stage180, in the manner described herein above, and as shall further bedescribed below.

FIG. 3 shows a detailed illustration of an exemplary embodiment of thebeam directing arrangement 200 of FIG. 1. In particular, the beamdirecting arrangement 200 is designed so as to selectively direct thepulsed beam 135 toward a particular chamber, e.g., pursuant to theinstructions of the processing arrangement 100. As described above, uponthe completion of the SLS-processing of the sample 170 in the firstchamber 210, the processing arrangement 100 may configure the beamdirecting arrangement 200 to direct the pulsed beam to the secondchamber 220 so as to SLS-process the newly-loaded and previouslyunirradiated sample 170 that is provided on the translation stage 180 ofthe second chamber 220.

This can be accomplished by providing a beam reflecting member 250(e.g., a mirror) in the beam directing arrangement 200 so that it wouldbe able to selective control the path of the pulsed beam 135 (based onthe instructions of the processing arrangement 100) toward the firstchamber 210 or the second chamber 220. It should be understood by thoseskilled in the art that, either in addition or instead of the beamreflecting member 250, it is also possible to use other mechanicalcomponents in the beam directing arrangement 200 to selectively directthe pulsed beam in the manner discussed above.

FIG. 4 shows a top-level flow diagram of an exemplary embodiment of aprocess according to the present invention for sequentiallySLS-processing and/or UGS-processing two or more samples, with eachsample being provided in the respective chamber. In step 1000, thehardware components of the system of FIG. 1, such as the beam source110, the energy beam modulator 120, and the beam attenuator and shutter130 are first initialized at least in part by the processing arrangement100. The sample 170 is loaded onto the sample translation stage 180 ofthe first chamber in step 1005. It should be noted that such loading maybe performed either manually or automatically using known sample loadingapparatuses under the control of the processing arrangement 100. Next,the sample translation stage 180 of the first chamber 210 can be moved,preferably under the control of the computing arrangement 100, to aninitial position in step 1010. Various other optical components of oneor more of the chambers 210, 220 may be adjusted and/or aligned eithermanually or under the control of the processing arrangement 100 for aproper focus and alignment in step 1015, if necessary. In step 1020, theirradiation beam 111 can be stabilized at a predetermined pulse energylevel, pulse duration and repetition rate.

Then, in step 1027, the entire sample 170 that is provided on the stage180 of the first chamber 210 is irradiated according to one or more ofthe SLS-techniques and/or UGS-techniques described in the publicationslisted above until such sample is completely processed. Then, in step1030, the processing arrangement 100 determines if the next unprocessedsample is available in the second chamber 220. In particular, it isdetermined if the next unprocessed sample 170 has been loaded into thetranslation stage 180 of the second chamber 220. If that is not thecase, then the exemplary process according to the present inventionwaits until the sample 170 is loaded unto the stage 180 of the secondchamber 220. Otherwise, in step 1035, the unprocessed sample 170arranged on the translation stage 180 of the second chamber 220 isirradiated according to one or more of the SLS/UGS-techniques until itis completely processed.

Then, in step 1040, it is determined whether there are any furthersamples to be SLS-processed and/or UGS-processed. If so, in step 1045,the pulsed beam is directed to process another unprocessed sample thatis loaded unto the translation stage 180 of the first chamber 210 (fromwhich the previously SLS/UGS-processed sample has been unloaded), andthe process according to the present invention returns to step 1030 forprocessing such unprocessed sample 170 that is provided in the firstchamber 210, as described above. If, in step 1040, it is determined thatthere are no more samples to be processed, and the hardware componentsand the beam 111 of the system shown in FIG. 1 can be shut off in step1050, and this process may be terminated.

FIG. 5 shows a detailed flow diagram of an exemplary embodiment of step1035 of the process according to the present invention in which thesample 170 provided on one translation stage 170 of a particular chamber(e.g., the second chamber 220) is being SLS/UGS-processed, whilepreviously SLS-processed sample 170 is unloaded from the translationstage 180 of another chamber (e.g., the first chamber 210), and anunprocessed sample is loaded thereon. In particular, while the sample170 (provided in the second chamber 220) is being irradiated to becompletely SLS/UGS-processed in step 2010, the previouslySLS/UGS-processed sample 170 of the first chamber 210 is unloaded fromthis chamber 210 (step 2020), and then another unprocessed sample 170 isloaded unto the translation stage 180 of the first chamber 210 (step2030). Step 2010 is preferably performed contemporaneously (or at leastin the same time period) as steps 2020 and 2030.

Thereafter, it is determined, in step 2040, whether theSLS/UGS-processing of the sample 170 provided in the second chamber 220being irradiated in step 2010 has been completed. If not, the processaccording to the present invention (preferably under the control of theprocessing arrangement 100) waits until the processing of such sample170 is completed in the second chamber 220. Otherwise, it is determined,in step 2050, whether the new unprocessed sample 170 is loaded onto thetranslation stage 180 of the first chamber 210. If such unprocessedsample 170 has not yet been loaded, the pulsed beam is provided awayfrom the completely SLS/UGS-processed sample 170 that is arranged in thesecond chamber 220 with the aid of the beam directing arrangement 200,and under the control of the processing arrangement 100. This isperformed without the need to shut down the beam source 110, thus notcompromising the stability of the pulsed beam 135, 164. If it isdetermined that the unprocessed sample 170 has been loaded onto thetranslation stage 180 of the first chamber 210, the process according tothe present invention continues to step 1040, directs the pulsed beam(using the beam directing arrangement 200 under the control of theprocessing arrangement 100) to irradiate and completely SLS-process theunprocessed sample 170 loaded onto the stage 180 of the first chamber210.

It is to be understood that while the invention has been described inconjunction with the detailed description hereof, the foregoingdescription is intended to illustrate and not limit the scope of theinvention. Other aspects, advantages, and modifications are within thescope of the present invention. In particular, other exemplaryembodiments of the system and process according to the present inventioncan process the samples provided in more than two chambers. For suchembodiments, the processing arrangement 100 may control the beamdirecting arrangement to selectively direct the pulsed beam 135 to eachof these chambers when new unprocessed samples are loaded therein.

The foregoing merely illustrates the principles of the invention.Various modifications and alterations to the described embodiments willbe apparent to those skilled in the art in view of the teachings herein.For example, while the above embodiment has been described with respectto at least partial lateral solidification and crystallization of thesemiconductor thin film, it may apply to other materials processingtechniques, such as micro-machining, photo-ablation, andmicro-patterning techniques, including those described in Internationalpatent application no. PCT/US01/12799 and U.S. patent application Ser.Nos. 09/390,535, 09/390,537 and 09/526,585, the entire disclosures ofwhich are incorporated herein by reference. The various mask patternsand intensity beam patterns described in the above-referenced patentapplication can also be utilized with the process and system of thepresent invention. It will thus be appreciated that those skilled in theart will be able to devise numerous systems and methods which, althoughnot explicitly shown or described herein, embody the principles of theinvention and are thus within the spirit and scope of the presentinvention.

1. A process for processing at least one section of each of a pluralityof semiconductor film samples, comprising the steps of: (a) controllingan irradiation beam source to emit successive irradiation beam pulses ata predetermined repetition rate; (b) using the emitted beam pulses,irradiating the at least one section of a first sample of thesemiconductor film samples using at least one of a first sequentiallateral solidification (“SLS”) technique and a first uniform smallgrained material (“UGS”) technique to process the at least one sectionof the first sample; (c) upon the completion of step (b), redirectingthe beam pulses to impinge the at least one section of a second sampleof the semiconductor film samples; and (d) using the redirected beampulses, irradiating the at least one section of the second sample usingat least one of a second SLS technique and a second UGS technique toprocess the at least one section of the second sample, the first andsecond techniques being one of different from one another andsubstantially the same.
 2. The process according to claim 1, wherein thesecond sample is an unprocessed sample, wherein, in step (b), the firstsample is loaded on a stage of a first chamber, wherein, in step (d),the second sample is provided on a stage of the second chamber.
 3. Theprocess according to claim 2, further comprising the steps of: (e)during step (b), unloading a third sample of the film samples previouslyirradiated and processed using at least one of the first and secondtechniques from the stage of the second chamber; and (f) during step(b), after step (e) and before step (d), loading the second sample untothe stage of the second chamber.
 4. The process according to claim 3,further comprising the steps of: (g) during step (d), unloading thefirst sample from the stage of the first chamber; and (h) during step(d) and after step (g), loading a fourth unprocessed sample of the filmsamples unto the stage of the first chamber.
 5. The process according toclaim 4, further comprising the steps of: (i) upon the completion ofstep (h), redirecting the beam pulses to impinge the at least onesection of the fourth sample; and (j) after step (i) and using theredirected beam pulses, irradiating the at least one section of thefourth sample using at least one of the first and second techniques toprocess the at least one section of the fourth sample.
 6. The processaccording to claim 3, further comprising the steps of: (k) determiningif the second sample successfully loaded unto the stage of the secondchamber; and (l) if step (k) produces an unsuccessful determination,preventing the irradiation of the second sample in step (d) until step(k) produces a successful result.
 7. The process according to claim 1,wherein the beam pulses are redirected in step (c) using a beamredirecting arrangement which includes a beam reflection device.
 8. Theprocess according to claim 1, further comprising the steps of: (m)determining if all of the at least one section of the first sample wassuccessfully processed in step (b); and (n) if step (m) produces anunsuccessful determination, preventing the irradiation of the secondsample in step (d) until step (k) produces a successful result.
 9. Asystem for processing at least one section of each of a plurality ofsemiconductor film samples, comprising: a processing arrangement which,when executing a set of instruction, is operable to: (a) control anirradiation beam source to emit successive irradiation beam pulses at apredetermined repetition rate, (b) using the emitted beam pulses, directthe beam pulse to irradiate the at least one section of a first sampleof the semiconductor film samples using at least one of a firstsequential lateral solidification (“SLS”) technique and a first uniformsmall grained materials(“UGS”) technique to process the at least onesection of the first sample, (c) upon the completion of the processingof the at least one section of the first sample, effect a redirection ofthe beam pulses to impinge the at least one section of a second sampleof the semiconductor film samples, and (d) direct the redirected beampulse to irradiate the at least one section of the second sample usingat least one of a second SLS technique and a second UGS technique toprocess the at least one section of the second sample, the first andsecond techniques being one of different from one another andsubstantially the same.
 10. The system according to claim 9, wherein thesecond sample is an unprocessed sample, wherein the processingarrangement is operable to load the first sample on a stage of a firstchamber, wherein the processing arrangement is operable to load thesecond sample on a stage of the second chamber.
 11. The system accordingto claim 10, wherein the processing arrangement is further operable to:(e) during the irradiation of the first sample, effect an unloading of athird sample of the film samples previously irradiated and processedusing at least one of the first and second techniques from the stage ofthe second chamber, and (f) during the irradiation of the first sampleand after the unloading of the second sample, effect a loading of thesecond sample unto the stage of the second chamber.
 12. The systemaccording to claim 11, wherein, the processing arrangement is furtheroperable to: (g) during the irradiation of the second sample, effectingthe unloading the first sample from the stage of the first chamber, and(h) during the irradiation of the second sample and after the unloadingof the first sample, effect a loading of a fourth unprocessed sample ofthe film samples unto the stage of the first chamber.
 13. The systemaccording to claim 12, wherein the processing arrangement is furtheroperable to: (i) upon the completion of the loading of the fourthsample, effecting a redirection of the beam pulse to impinge the atleast one section of the fourth sample, and (j) after redirecting thebeam pulses to impinge the at least one section of the fourth sample,directing the redirected beam pulses to irradiate the at least onesection of the fourth sample using at least one of the first and secondtechniques to process the at least one section of the fourth sample. 14.The system according to claim 11, wherein the processing arrangement isfurther operable to: (k) determine if the second sample successfullyloaded unto the stage of the second chamber, and (l) if item (k)produces an unsuccessful determination, prevent the irradiation of thesecond sample in until the second sample is successfully loaded unto thestage of the second chamber.
 15. The system according to claim 9,wherein the processing arrangement is operable to redirect the beampulses a beam redirecting arrangement which includes a beam reflectiondevice.
 16. The system according to claim 9, wherein the processingarrangement is further operable to: (m) determine if all of the at leastone section of the first sample was successfully processed; and (n) ifitem (m) produces an unsuccessful determination, preventing theirradiation of the second sample until the processing of all of the atleast one section of the first sample has been successfully processed.